1.標(biāo)準(zhǔn)4針封裝:2.5×2.0(2520),3.2×2.5(3225),5.0×3.2(5032),7.0×5.0(705),毫米×毫米
2. LVCMOS / LVTTL輸出，精度在80.000001至220MHz之間的任何頻率，[敏感詞]到小數(shù)點后6位
3. 頻率穩(wěn)定性低至±10ppm
4. 超低相位抖動: 0.5ps(12KHz至20MHz)
5. 符合RoHS和REACH,無鉛
6. 低壓電源電壓為1.8V,2.5V至3.3V
7. 應(yīng)用范圍: 以太網(wǎng),WiFi,SATA,計算,存儲,電信,工業(yè)控制,視頻,音頻,SAS等。
|
Item / Type |
SiT8209 |
|
Dimensions |
2.5×2.0×0.75, 3.2×2.5×0.75, 5.0×3.2×0.75, 7.0×5.0×0.9 mm |
|
Output |
LVCMOS /LVTTL |
|
Frequency stability |
±10ppm, ±20ppm, ±25ppm, ±50ppm |
|
Output frequency range |
80MHz~220MHz |
|
Supply voltage |
1.8V, 2.5V, 2.8V, 3.3V |
|
Current cosumption |
36mA max. |
|
OE disable current |
31mA max. |
|
Standby current |
70μA max. |
|
Duty cycle |
45~55% |
|
Rise /Fall time |
2ns max. |
|
Output voltage Voh /Vol |
90% Vdd min. /10% Vdd max. |
|
Input voltage Vih /Vil |
70% Vdd min. /30% Vdd max. |
|
Input pull-up impedance |
2ΜΩ min. |
|
Enable/Diable time |
115ns max. |
|
Start-up time |
10ms max. |
|
Operation temperature |
-20~+70oC, -40~+85oC |
|
Storage temperature |
-65~+150oC |
|
RMS Phase jitter (12 KHz~20 MHz) |
0.5pS Typ. |
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